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Photointerrupter(Transmissive) KPI-511 DESCRIPTION The photointerrupter high-performance standard type KPI-511 combines a high-output GaAs IRED with a high sensitivity phototransistor. DIMENSIONS FEATURES * PWB direct mount type * GAP : 5.0mm APPLICATIONS * Printers * Copiers *A T M * Ticket Vending Machines ABSOLUTE MAXIMUM RATINGS Parameter Forward Current Input Pulse Forward Current Reverse Voltage Power Dissipation Collector Emitter Voltage Output Emitter Collector Voltage Collector Current Collector Power Dissipation Operating Temperature Storage Temperature *2 *3 *2 *1 (Ta=25E) Symbol IF IFP VR PD VCEO VECO IC PC TOPR TSTG TSOL Rating 60 1 5 100 30 5 40 100 -25 ~ +85 -40 ~ +85 260 Unit mA A V mW V V mA mW E E E Soldering Temperature *1. Pulse width : twA100sec.period : T=10msec *2. No icebound or dew *3. For MAX. 5 seconds at the position of 1mm from the package ELECTRO-OPTICAL CHARACTERISTICS Parameter Forward Voltage Input Reverse Current Capacitance Peak Wavelength Output Dark Current Light Current Coupled Collector Emitter Saturation Voltage Response Time Rise Time Fall Time (Ta=25E) Symbol VF IR CT ?P ICEO IL VCE(SAT) tr tf IF=20mA VR=5V f=1KHz - Conditions MIN. 0.5 - TYP. 1.2 25 940 5 5 MAX. 1.7 10 10 15 0.4 - Unit V A PF nm A mA V s s VCE=10V, 0 Lux VCE=5V, IF= 20mA (Non-shading) IF=20mA, IC=0.1mA VCC=5V, IC=2mA, RL=100U 1/2 Power dissipation(P ) Photointerrupter(Transmissive) KPI-511 Collector power dissipation Vs. Ambient temparature ( N) L Relative light current(IForward current(I ) F ) Forward current Vs. Forward voltage ( I) Ta=25 C L ig ht Cu rre nt( I ) IL ) Light Current( L 4 3 2 1 0 0 Light current Vs. Forward current VCE =5V Ta=25 C ( I) Power dissipartion( PC )C 100 Forward current( I F ) 100 50 50 0 0 20 40 60 80 (E) Ambient temperature(Ta) Ambient temperature(Ta) 0 0.5 1.0 1.5 2.0 Forward voltage(VVF) Forward voltage( ) F (V) 0 10 20 30 40 (mA) Forward Current( )F Forward Current(I IF ) Light current Vs. Collentor-Emitter voltage ( I) Ta=25 C 5 L ig ht Cu rre nt(II ) L Light Current( ) L (%) Relative light current Vs. Ambient temperature Dark current Vs. Ambient temperature (%) X Y V =5V CC C Ta=25 IF =10mA V =5V CC C Ta=25 IF =10mA Relative light current( I L ) 4 3 2 1 IF =50mA IF =40mA IF =30mA IF =20mA IF =10mA 0 2 4 6 8 10 12 (V) Collector-Emitter Voltage( V ) ) Collector-Emitter Voltage(V CECE 100 50 Ambient temperature( Ta ) Re la tiv e lig ht cu rre nt(IIL)) Relative light current( V =5V CE IF=20mA L 100 50 Response time tr, tf 0 0 -20 20 (E) 0 0 4060 Ambient temperature(Ta) 0 -2 Response time measurement circuit 0 +2 -2 0 Moving distance( L ) Moving distance(L) +2 (mm) 1 10 Method of measuring position detection characteristic Optical Axis(X) Load Resistance( RL ) 2/2 Optical Axis(Y) Response time tr, tf (A ) 3 10 2 10 Response time measurement circuit CC Input V VC CC =5V Ta=25 ICL V R OUT IF=10mA Input Output 90% 10% td tf tr tr tf Method ofcharacteristic detection measuring position Optical Axis(X) 2 3 4( ) 10 10 10U Road Resistance(R ) L - 0 Switching time Vs. Load resistance Optical Axis(Y) |
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