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 Photointerrupter(Transmissive)
KPI-511
DESCRIPTION
The photointerrupter high-performance standard type KPI-511 combines a high-output GaAs IRED with a high sensitivity phototransistor.
DIMENSIONS
FEATURES
* PWB direct mount type * GAP : 5.0mm
APPLICATIONS
* Printers * Copiers *A T M * Ticket Vending Machines
ABSOLUTE MAXIMUM RATINGS
Parameter
Forward Current Input Pulse Forward Current Reverse Voltage Power Dissipation Collector Emitter Voltage Output Emitter Collector Voltage Collector Current Collector Power Dissipation Operating Temperature Storage Temperature
*2 *3 *2 *1
(Ta=25E)
Symbol
IF IFP VR PD VCEO VECO IC PC TOPR TSTG TSOL
Rating
60 1 5 100 30 5 40 100 -25 ~ +85 -40 ~ +85 260
Unit
mA A V mW V V mA mW E E E
Soldering Temperature
*1. Pulse width : twA100sec.period : T=10msec *2. No icebound or dew *3. For MAX. 5 seconds at the position of 1mm from the package
ELECTRO-OPTICAL CHARACTERISTICS
Parameter
Forward Voltage Input Reverse Current Capacitance Peak Wavelength Output Dark Current Light Current Coupled Collector Emitter Saturation Voltage Response Time Rise Time Fall Time
(Ta=25E)
Symbol
VF IR CT ?P ICEO IL VCE(SAT) tr tf IF=20mA VR=5V f=1KHz -
Conditions
MIN.
0.5 -
TYP.
1.2 25 940 5 5
MAX.
1.7 10 10 15 0.4 -
Unit
V A
PF
nm A mA V s s
VCE=10V, 0 Lux VCE=5V, IF= 20mA (Non-shading) IF=20mA, IC=0.1mA VCC=5V, IC=2mA, RL=100U
1/2
Power dissipation(P )
Photointerrupter(Transmissive)
KPI-511
Collector power dissipation Vs. Ambient temparature
( N)
L Relative light current(IForward current(I ) F )
Forward current Vs. Forward voltage
( I) Ta=25 C L ig ht Cu rre nt( I ) IL ) Light Current( L 4 3 2 1 0 0
Light current Vs. Forward current
VCE =5V Ta=25 C
( I)
Power dissipartion( PC )C
100
Forward current( I F )
100
50
50
0
0
20 40 60 80 (E) Ambient temperature(Ta) Ambient temperature(Ta)
0
0.5 1.0 1.5 2.0 Forward voltage(VVF) Forward voltage( ) F
(V)
0
10 20 30 40 (mA) Forward Current( )F Forward Current(I IF )
Light current Vs. Collentor-Emitter voltage
( I) Ta=25 C 5 L ig ht Cu rre nt(II ) L Light Current( )
L
(%)
Relative light current Vs. Ambient temperature
Dark current Vs. Ambient temperature
(%) X Y V =5V CC C Ta=25 IF =10mA V =5V CC C Ta=25 IF =10mA
Relative light current( I L )
4 3 2 1
IF =50mA IF =40mA IF =30mA IF =20mA IF =10mA 0 2 4 6 8 10 12 (V) Collector-Emitter Voltage( V ) ) Collector-Emitter Voltage(V CECE
100 50
Ambient temperature( Ta )
Re la tiv e lig ht cu rre nt(IIL)) Relative light current(
V =5V CE IF=20mA
L
100
50
Response time tr, tf
0
0 -20 20 (E) 0 0 4060 Ambient temperature(Ta)
0 -2
Response time measurement circuit
0 +2 -2 0 Moving distance( L ) Moving distance(L)
+2 (mm)
1 10
Method of measuring position
detection characteristic
Optical Axis(X)
Load Resistance( RL )
2/2
Optical Axis(Y)
Response time tr, tf
(A ) 3 10 2 10
Response time measurement circuit CC Input V VC CC =5V Ta=25 ICL V R OUT IF=10mA Input Output 90% 10% td tf tr tr tf Method ofcharacteristic detection measuring position Optical Axis(X) 2 3 4( ) 10 10 10U Road Resistance(R ) L - 0
Switching time Vs. Load resistance
Optical Axis(Y)


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